| ‘lllvVISHAYQV www.vishay.com AR4PK, AR4PM Vishay General Semiconductor RATINGS AND cHARAcTERIsTIcs cunvEs (TA = 25 cc unless otherwise noted) EEa:S 220 '9 E 228 <_0 }0 K1 TM Measured aI Ine catnooe Band Terminal B 25 50 75 mo 125 150 175 TM - Mount Temperature (“Cl Fig. 1 — Maximum DC Forward Current Derating Cun/e 7 6 m 5WoJ 4EEoo. 30)atE0) 2>< 1 uD 0.4 08 1.2 1.6 2.0 2.4 28 3.2 as 4.0 4.4 4.8 Average Forward Current (A) Fig. 2 - Average Power Loss Characteristics T00 10 ________ instantaneous Forward Current (A) I 0.2 0.6 ‘.0 1.4 1.8 2.2 2.6 3.0 3.4 Instantaneous Fonlvard Voltage (V) Fig. 3 - Typical Instantaneous Fonivard Characteristics Revision: 21 -Aug-1 3 10 000 aDo 100 0.1 instantaneous Reverse Current (|_lA) 3 -- I------- I..- Dm 2222222“10 20 3D 40 50 60 70 50 en 10u Percent o' Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics 100 10 Junction Capacitance (pF) Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance 10 Transient Thermal impedance (“C/W) 0.01 ||||100 . IIII||IIllII||||||III||||||III||| 0 1 1 1 D t— Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Document Number: 89335 For technical questions within your region: DiogesArnericas@vishay.cOrn, DiogesAsia@vishay.com, DiodesEurope@Vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT To SPECIFIC DISCLAIMERS, SET FORTH AT www.vishg1.e9mzd9c?9100!! |